Use of some petrologic diagrams applied to analyses of volcanic rocks is unnecessarily difficult due to lack of data for construction of discriminant lines between rock series. Coordinates are provided for sufficient points to enable accurate plotting of the boundary lines within seven diagrams, viz.: ( 1 ) TAS - total alkalies (Na20+K20) vs. SIO2; (2) K20 vs. SiO2; (3) AFM; (4) Jensen; (5) KTP - K20-TiO~-P205; (6)FMS- (FeO*/MgO) vs. SIO2; and (7) TAKTIP- K20/(Na20+K20) vs. TiOz/P2Os. Different versions of these boundaries are collated to indicate their variable position, and it is demonstrated that inter-laboratory analytical precision suffices to account for almost all of their spread on the TAS and K20 vs. SiO2 diagrams.

The recent accessibility of the collection of Dumortier, the complementary collects in the Bas-Beaujolais and in the Southern Provence, allow us to present the paleontological revision of the Toarcian and Lower Aalenian brachiopods of the Rhone basin (Bas-Beaujolais, Mont d'Or Lyonnais, La Verpilliere - Saint Quentin-Fallavier and Southern Provence). Then, the systematics of Dumortier is reactualized. The different species are again located in a more precised strati graphical framework. So, it is possible to deduce the biostratigraphy of Toarcian and Lower Aalenian brachiopods and then, to verify the value of the zonal succession established before (Almeras & ah, 1991)

Whole industries currently rely on bulk-grown crystals of a variety of materials. These industries range from information technology, based on the ubiquitous silicon, through radiofrequency applications, using gallium arsenide, etc.,'to telecommunications and lighting, based on III-V compounds, to infrared imaging, based on cadmium mercury telluride, and to high-energy physics and medical imaging using scintillator materials. These materials are used either in the active mode, as for silicon, or in the passive mode where the bulk-grown material is used as a substrate on which to deposit a wide range of binary, ternary, quaternary, etc., compounds by several epitaxial growth processes.